(left) and (right) invented the (MOS field-effect transistor) in 1959.A breakthrough in FET research came with the work of Egyptian engineer in the late 1950s.
In the course of trying to understand the mysterious reasons behind their failure to build a working FET, this led to Bardeen and Brattain instead building a in 1947, which was followed by Shockley's in 1948.The first FET device to be successfully built was the (JFET). Shockley initially attempted to build a working FET, by trying to modulate the conductivity of a, but was unsuccessful, mainly due to problems with the, the, and the and compound materials.
The effect was later observed and explained by and while working under at in 1947, shortly after the 17-year patent expired. Proposed the concept of a field-effect transistor in 1925.The concept of a field-effect transistor (FET) was first patented by Austro-Hungarian physicist in 1925 and by in 1934, but they were unable to build a working practical based on the concept. The most widely used field-effect transistor is the (metal-oxide-semiconductor field-effect transistor). Field effect transistors generally display very at low frequencies.
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